Note: f T or Transition frequency is a measure of the input frequency stability of the transistor. The Epitaxial version has a transition frequency of 2.5 MHz. To begin with, the transition frequency f T of the original 2N3055 transistor is low(). Parameter Value Collector-Base Voltage(V CBO) 100 V Collector-Emitter Voltage(V CEO) 60 V Emitter-Base Voltage(V EBO) 7 V Continuous Collector Current(I C) 15 A Continuous Base Current(I B) 7 A DC Current Gain(h FE) 120(Max) Collector Power Dissipation(P C) 115 W Storage Temperature(T STG) -65 ☌ ~ 200 ☌ Specifications of 2N3055 TransistorĢN3055 Epitaxial Base Version VS Homotaxial version
Given below is the specifications table of the 2N3055 Transistor that lists its features. The body of the transistor acts as the collector terminal. *This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.2N3055 Transistor Pinout(upper section is short)ī) The distance of the upper section is less than the lower one- The terminal on the left is the Base. It has a higher current and voltage rating than the 2N3055, and can be used in applications that require higher power handling. It can be used in applications where both NPN and PNP transistors are required.ĢSC5200: This is a power transistor with a maximum collector current of 30A and a maximum collector-emitter voltage of 230V. MJ2955: This is a complementary power transistor to the 2N3055, with a maximum collector current of 15A and a maximum collector-emitter voltage of 60V. It has similar specifications to the 2N3055 and can be used as a drop-in replacement in most applications. TIP3055: This is a power transistor with a maximum collector current of 15A and a maximum collector-emitter voltage of 60V. Here are some additional details on each of the recommended replacements: These transistors have similar voltage and current ratings, and can be used in the same types of applications as the 2N3055. It is commonly used in power supply and amplifier circuits.Ī suitable replacement for the 2N3055 would be any other power transistor with similar specifications, such as the TIP3055, MJ2955, or 2SC5200. The 2N3055 is a popular power transistor with a maximum collector current of 15A and a maximum collector-emitter voltage of 60V. It is commonly available in a TO-3 metal case, which provides good thermal conductivity and allows for easy mounting to a heatsink. The 2N3055 transistor has a large package size and can handle high power dissipation.
Its high current capability and low collector-emitter saturation voltage make it well-suited for power applications. It is commonly used in power amplifiers, voltage regulators, and high current switching circuits. The 2N3055 transistor has been in use since the 1960s and is still widely used today due to its reliability and ruggedness. It is an NPN (negative-positive-negative) transistor with a maximum collector current of 15 amps and a maximum collector-emitter voltage of 60 volts. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORĢN3055 is a bipolar junction transistor (BJT) that is widely used as a power transistor in various electronic circuits. NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTSġ5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS
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